AMC0XXCFLKA Datasheet, PDF (31/42 Pages) Advanced Micro Devices – 1, 2, 4, or 10 Megabyte 5.0 V-only Flash Memory PC Card

Word-Wide Operation
Parameter
Symbol
Parameter Description
Test Description
I_LI
Input Leakage Current
V_CC = V_CC Max, V_IN = V_CC or V_SS
(CE, REG, WE, OE = –300 µA Min)
I_LO
Output Leakage Current
V_CC = V_CC Max, V_OUT = V_CC or V_SS
I_CCS
V_CC Standby Current (Note 1)
V_CC = V_CC Max
CE = V_CC ± 0.2 V
V_IN = V_CC or GND
I_CC1
V_CC Active Read Current
(Notes 1, 2)
I_CC2
V_CC Programming Current
(Notes 1, 2)
V_CC = V_CC Max, CE = V_IL,
OE = V_IH, I_OUT = 0 mA, at 3.3 MHz
CE = V_IL
Programming in Progress
1 MB
2 MB
4 MB
10 MB
1 MB
2 MB
4 MB
10 MB
1 MB
2 MB
4 MB
10 MB
Min
–300
–300
–300
–300
Max
+ 20
+ 20
+ 20
+ 20
± 20
± 20
± 20
± 20
0.7
0.9
1.3
2.5
90
130
Unit
µA
µA
mA
mA
mA
V_IL
V_IH
V_OL
V_OH
V_LKO
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Low V_CC Lock-Out Voltage
I_OL = 3.2 mA, V_CC = V_CC Min
I_OH = 2.0 mA, V_CC = V_CC Min
–0.5
0.8
V
2.4 V_CC + 0.3 V
0.40
V
3.8
V_CC
V
3.2
4.2
V
Notes:
1. For TTL input voltage levels (V_IL or V_IH), the minimum limit should be increased by:
2 mA for 2 Mbyte
6 mA for 4 Mbyte
18 mA for 10 Mbyte.
2. Two Flash devices active, all the others in standby
5/4/98
AmC0XXCFLKA
31