AMC0XXCFLKA Datasheet, PDF (11/42 Pages) Advanced Micro Devices – 1, 2, 4, or 10 Megabyte 5.0 V-only Flash Memory PC Card

Table 5. Word Command Definitions (Note 7)
Embedded
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Addr* Data
Second Bus
Write Cycle
Addr* Data
Third Bus
Write Cycle
Addr* Data
Fourth Bus
Read/Write Cycle
Addr* Data
Fifth Bus
Write Cycle
Addr* Data
Sixth Bus
Write Cycle
Addr* Data
Reset/Read
4 AAAAH AAAA 5554H 5555 AAAAH F0F0 RA
RW
Autoselect
4
AAAAH AAAA 5554H 5555 AAAAH 9090 00H/02H
0101/
A4A4
Byte Write
4 AAAAH AAAA 5554H 5555 AAAAH A0A0 PA
PW
Segment Erase 6 AAAAH AAAA 5554H 5555 AAAAH 8080 AAAAH AAAA 5554H 5555 AAAAH 1010
Sector Erase
6 AAAAH AAAA 5554H 5555 AAAAH 8080 AAAAH AAAA 5554H 5555 SA 3030
Sector Erase Suspend Erase can be suspended during sector erase with Addr (don’t care), Data (B0H)
Sector Erase Resume Erase can be resumed after suspend with Addr (don’t care), Data (30H)
Notes:
1. Address bit A16 = X = Don’t Care for all address commands except for Program Address (PA) and Sector Address (SA).
2. Bus operations are defined in Table 1.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse.
SA = Address of the sector to be erased. The combination of A17, A18, A19 will uniquely select any sector of a segment.
To select the memory segment:1 and 2 Mbyte: Use CE1, CE2, A20
4 Mbyte:
Use CE1, CE2, A20, A21
0 Mbyte:
Use CE1, CE2, A20–A23.
4. RW = Data read from location RA during read operation. (Word Mode).
PW = Data to be programmed at location PA. Data is latched on the rising edge of WE. (Word Mode).
5. Address for Memory Segment Pair 0 (S0 and S1) only. Address for the higher Memory Segment Pairs (S2, S3 = Pair 1, S4,
S5 = Pair 2, S6, S7 = Pair 3…) is equal to (Addr) + M* (80000H) where M = Memory Segment Pair number.
6. Word = 2 bytes = odd byte and even byte.
7. CE1 = 0 and CE2 = 0.
Table 6. Memory Sector Address Table
for Memory Segment S0
Sector A19 A18 A17 Address Range
0
0
0
0
00000h-0FFFFh
1
0
0
1
10000h-1FFFFh
2
0
1
0
20000h-2FFFFh
3
0
1
1
30000h-3FFFFh
4
1
0
0
40000h-4FFFFh
5
1
0
1
50000h-5FFFFh
6
1
1
0
60000h-6FFFFh
7
1
1
1
70000h-7FFFFh
Note: A0 is not mapped internally.
FLASH MEMORY WRITE/ERASE
OPERATIONS
Details of AMD’s Embedded Write and
Erase Operations
Embedded Erase™ Algorithm
The automatic memory sector or memory segment
erase does not require the device to be entirely prepro-
gramming prior to executing the Embedded Erase
command. Upon executing the Embedded Erase com-
mand sequence, the addressed memory sector or
memory segment will automatically write and verify the
entire memory segment or memory sector for an all
“zero” data pattern. The system is not required to pro-
vide any controls or timing during these operations.
When the memory sector or memory segment is auto-
matically verified to contain an all “zero” pattern, a
self-timed chip erase-and-verify begins. The erase and
verify operations are complete when the data on D7 of
the memory sector or memory segment is “1” (see
“Write Operation Status” section) at which time the
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