PALCE26V12 Datasheet, PDF (16/21 Pages) Advanced Micro Devices – 28-Pin EE CMOS Versatile PAL Device

ENDURANCE CHARACTERISTICS
The PALCE26V12 is manufactured using AMD’s ad-
vanced Electrically Erasable process. This technology
uses an EE cell to replace the fuse link used in bipolar
AMD
parts. As a result, the device can be erased and
reprogrammed—a feature which allows 100% testing at
the factory.
Symbol
tDR
N
Parameter
Min Pattern Data Retention Time
Min Reprogramming Cycles
Test Conditions
Max Storage Temperature
Max Operating Temperature
Normal Programming Conditions
Min Unit
10 Years
20 Years
100 Cycles
PALCE26V12 Family
2–321