ACE25Q400G Datasheet, PDF (41/46 Pages) ACE Technology Co., LTD. – 4M BIT SPI NOR FLASH Memory Series

ACE25Q400G
4M BIT SPI NOR FLASH Memory Series
DC Electrical Characteristics
(T= -40℃~85℃, VCC=2.7~3.6V)
Table17
Symbol
Parameter
Test Condition Min.
Typ
Max. Unit.
ILI Input Leakage Current
±2
µA
ILO Output Leakage Current
±2
µA
ICC1 Standby Current
ICC2 Deep Power-Down Current
ICC3
Current: Read Single/Dual/Quad
1MHz
Current: Read Single/Dual/Quad
33MHz
Current: Read Single/Dual/Quad
50MHz
Current: Read Single/Dual/Quad
108MHz
/CS=VCC,
VIN=VCC or VSS
/CS=VCC,
VIN=VCC or VSS
SCLK=0.1VCC/
0.9VCC⁽¹⁾
13
25
µA
2
5
µA
3/4/5
3.5/5/6 mA
5/11/19 7.5/12/19.5 mA
6.5/16/30 9.5/17/33 mA
10/33/60 12/35/65 mA
ICC4 Operating Current(Page Program)
/CS=VCC
15
mA
ICC5 Operating Current(WRSR)
/CS=VCC
5
mA
ICC6 Operating Current(Sector Erase)
/CS=VCC
20
mA
ICC7 Operating Current(Block Erase)
/CS=VCC
20
mA
ICC8 Operating Current (Chip Erase)
/CS=VCC
20
mA
VIL Input Low Voltage
-0.5
0.2VCC
V
VIH Input High Voltage
0.8VCC
VCC+0.4 V
VOL Output Low Voltage
IOL =100µA
0.4
V
VOH Output High Voltage
IOH =-100µA VCC-0.2
V
Note:
(1) ICC3 is measured with ATE loading
VER 1.2 41