K2611B_14 Datasheet, PDF (6/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

K2611B Product Description
Silicon N-Channel MOSFET
DUT
V_{D S}
I_{S D}
L
Driver
RG
Same Type
as DUT
VD D
VG S
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
(Driver)
IS D
(DUT)
VD S
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
10V
I_{F M} ,Body Diode Forward Current
di/dt
IR M
Body Diode Reverse Current
Body Diode Recovery dv/dt
VS _D
VD D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : [phone] Fax : [phone]
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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