K2611B_14 Datasheet, PDF (2/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

K2611B Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
IGSS
Gate-source breakdown voltage
V(BR)GSS
Drain cut -off current
IDSS
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on Rise time
Switching time
Turn-on Delay time
Turn-on Fall time
Turn-off Delay time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
V(BR)DSS
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
td(on)
tf
td(off)
Qg
Qgs
Qgd
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=900V,VGS=0V
VDS=720V,Tc=125℃
ID=250µA,VGS=0V
VDS=VGS,ID=250µA
VGS=10V,ID=5.5A
VDS=40V,ID=5.5A
VDS=25V,
VGS=0V,
f=1MHz
VDD=450V,
ID=11A
RG=25Ω
(Note4,5)
VDD=720V,
VGS=10V,
ID=11A
(Note4,5)
Min
-
±30
-
900
3.0
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
0.90
9.5
2550
22
210
130
54
80
125
Max
±100
-
1
10
-
5.0
1.10
-
3340
30
270
280
122
181
304
66
80
13
-
35
-
Unit
nA
V
µA
µA
V
V
Ω
S
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=11A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr
IDR=11A,VGS=0V,
Qrr
dIDR / dt =100 A / µs
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=11A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Min Type Max Unit
-
-
11
A
-
-
44
A
-
-
1.4
V
-
999
-
ns
-
16.9
-
µC
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : [phone] Fax : [phone]
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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