K2611B_14 Datasheet, PDF (4/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

K2611B Product Description
Silicon N-Channel MOSFET
1 .2
1 .1
1 .0
0 .9
Notes:
1.VG S =0V
2.ID=250uA
0 .8
-7 5 -5 0 -2 5
0
25
50
7 5 100 125 150
。
Tj[ C ]
Fig.7 Breakdown Voltage Variation
vs.Temperature
Operation on This Area
is limited by RDS(ON)
10²
10¹
10⁰
1 0 ^-1
10⁰
10µs
100µ s
1m s
10ms
100ms
DC
Note:
1.TC=
2.TC=
21550^。C_。C
3.Single Pulse
10¹
10²
10³
VD S Drain-SourceVoltage[V]
Fig.9 Maximum Safe Operation Area
1
4 .0
3 .5
3 .0
2 .5
2 .0
1 .5
1 .0
Notes:
1.VG S =10V
0 .5
2.ID=5.5A
0 .0
-7 5 -5 0 -2 5
0
25
50
75
100 125 150
。
Tj[ C ]
Fig.8 On-Resistance Variation
vs.Temperature
12
10
8
6
4
2
0
25
50
75
100 _。 125
150
TC Case Temperature[ C ]
Fig.10 Maximum Drain Current
vs Case temperature
0 .1
0.01
D= 0. 5
0.2
0.1
0. 05
0. 02
0. 01
Single pulse
*Notes:
。
1.Z_{θJ C} (t)=0.45 C/W Max.
2.Duty Factor,D=t1/t2
3.TJM-TC=PDM* ZθJ C (t)
PD M
t1
t2
1E-5
1E-4
1E-3
0.01
0 .1
1
t1 Square Wave Pulse Duration[sec]
Fig.11 Transient thermal Response Curve
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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