K2611B_14 Datasheet, PDF (3/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

K2611B Product Description
Silicon N-Channel MOSFET
VG S
To p 1 5 V
10V
9V
8V
7V
10
6 .5 V
6V
5 .5 V
Bo tto m 5 V
10
1 5 0^。C
1
2 5^。C
Notes:
1
12..2Tc5=02u5s_。pCulse test
1
10
VD S [V]
Fig.1 On Region Characteristics
1 .4
Notes:
1.250us pulse test
2.VD S =40V
0 .1
2
4
6
8
10
VG S [V]
Fig.2 Transfer Characteristics
10
1 .2
VG S =10V
1 .0
0 .8
VG S =20V
。
Note:Tj=25 C
0
2
4
5
6 10 12 14 16 18 20
ID[A]
Fig.3 On-Resistance Variation vs
Drain current and Gate Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
0
1 0 ^-1
Cis s
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Co s s
Cr s s
10⁰
10¹
VD S Drain-Source Voltage[V]
Fig.5 Capacitance Characteristics
1 5 0^。C
1
2 5^。C
Notes:
1.250us pulse test
2.VG S =0V
0 .1
0 .2 0 .3 0 .4 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 1 .1 1.2 1.3 1.4 1.5
VS D [V]
Fig.4 Body Diode Forward voltage
Variation with Source Current And
Temperature
12
VD S =720V
10
VD S =450V
8
VD S =180V
6
4
2
*Note:ID=11A
0
0
10
20
30
40
50
60
70
Qg Toltal Gate Charge[nC]
Fig.6 Gate Charge Characteristics
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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