K2611B_14 Datasheet, PDF (5/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

K2611B Product Description
Silicon N-Channel MOSFET
Same type
V_{G S}
50K Ω
as DUT
Qg
12V
200nF
300nF
10V
V_{G S}
V_{D S}
Qg _s
Qg _d
DUT
3m A
Charge
Fig.12 Gate Test circuit & Waveform
10V
V_{D S}
V_{G S}
R_G
R_L
V_{D D}
DUT
V_{D S}
90%
V_{G S} ^{1 0 %}
t_d(on)
t_r
t_{o n}
t_{d ( o ff)}
t_f
t_{o ff}
Fig.13 Resistive Switching Test Circuit & Waveform
V_{D S}
I_D
R_G
L
E_{A S =}
1
2
L I_{A S} ²
B V_DSS
B V _{D S S}- V_{D D}
B V_DSS
I_{A S}
V_{D D}
I
(
D
t)
10V
t_p
DUT
V_{D D}
V_{D S}(t)
t_p
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : [phone] Fax : [phone]
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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