K2611B_14 Datasheet, PDF (1/8 Pages) Shenzhen Winsemi Microelectronics Co., Ltd – Silicon N-Channel MOSFET

K2611B Product Description
Silicon N-Channel MOSFET
Features
� 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
� Ultra-low Gate charge(Typical 66nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Improved dv/dt capability
� RoHS product
General Description
This N-Channel enhancement mode power field effect transistors are
produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance , provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ
Junction Temperature
Tstg
Storage Temperature
TL
Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
900
11
6.9*
44
±30
970
11
30.1
4.1
277
2.22
150
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/℃
℃
℃
℃
Value
Min
Typ
Max
-
-
0.45
-
-
40
Units
℃/W
℃/W
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WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F055-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS