W25Q32BV_13 Datasheet, PDF (66/78 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q32BV
8.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
/CS High to Power-down Mode
tDP⁽²⁾
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
/CS High to Standby Mode with Electronic Signature
Read
tRES2⁽²⁾
/CS High to next Instruction after Suspend
tSUS⁽²⁾
ns
7
ns
12
ns
ns
ns
3
µs
3
µs
1.8
µs
20
µs
Write Status Register Time
tW
Byte Program Time (First Byte) ⁽⁴⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t_BP2
Page Program Time
tPP
Sector Erase Time (4KB)
tSE
10
15
ms
20
50
µs
2.5
12
µs
0.7
3
ms
30 200/400⁽⁵⁾ ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
tBE₁
120
800
ms
tBE₂
150
1,000
ms
tCE
7
15
s
Notes:
1.Clock high + Clock low must be less than or equal to 1/fC.
2.Value guaranteed by design and/or characterization, not 100% tested in production.
3.Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4.For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number
of bytes programmed.
5.Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
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