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| W25Q32BV_13 Datasheet, PDF (62/78 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI | |||
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W25Q32BV
8.3 Power-Up Power-Down Timing and Requirements(1
PARAMETER
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
SYMBOL
tVSL(1)
tPUW(1)
VWI(1)
SPEC
MIN
10
1
1.0
MAX
10
2.0
Note:
1. These parameters are characterized only.
VCC
VCC (max)
Program, Erase and Write Instructions are ignored
/CS must track VCC
VCC (min)
VWI
Reset
State
tVSL
Read Instructions
Allowed
tPUW
Device is fully
Accessible
UNIT
µs
ms
V
VCC
Figure 38a. Power-up Timing and Voltage Levels
/CS must track VCC
during VCC Ramp Up/Down
Time
/CS
Figure 38b. Power-up, Power-Down Requirement
Time
- 62 -
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