W25Q32BV_13 Datasheet, PDF (63/78 Pages) Winbond – 3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q32BV
8.4 DC Electrical Characteristics
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL CONDITIONS
CIN(1)
Cout⁽¹⁾
VIN = 0V
VOUT = 0V
SPEC
MIN
TYP
MAX
6
8
Input Leakage
ILI
±2
I/O Leakage
ILO
±2
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
5
Current Read Data /
Dual /Quad 1MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
6/7.5/9
Current Read Data /
Dual /Quad 33MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7/8
9/10.5/12
Current Read Data /
Dual /Quad 50MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
7/8/9 10/12/13.5
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz
ICC3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
10/11/12 15/16.5/18
Current Write Status
Register
ICC4
/CS = VCC
8
12
Current Page Program ICC5
/CS = VCC
20
25
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
Current Chip Erase
ICC7
/CS = VCC
20
25
Input Low Voltage
VIL
VCC x 0.3
Input High Voltage
VIH
VCC x 0.7
Output Low Voltage
VOL
IOL = 100 µA
0.2
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
- 63 -
Publication Release Date: October 04,2013
Revision I