W25Q128BV_13 Datasheet, PDF (60/74 Pages) Winbond – 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q128BV
8. ELECTRICAL CHARACTERISTICS
8.1 Absolute Maximum Ratings ⁽¹⁾⁽²⁾
PARAMETERS
SYMBOL CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to VCC+0.6
V
Voltage Applied to Any Pin
VIO
Relative to Ground –0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note
°C
Electrostatic Discharge Voltage VESD⁽³⁾
Human Body Model –2000 to +2000
V
Notes:
1.This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not
guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may
cause permanent damage.
2.JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
3.Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on
restrictions on hazardous substances (RoHS) 2002/95/EU.
8.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
MIN MAX
Supply Voltage
VCC⁽¹⁾
F_R = 70MHz (Dual I/O & Quad SPI)
F_R = 104MHz (Single / Dual Output)
fR = 33MHz
2.7V
3.6V
Ambient Temperature,
Operating
TA
Industrial
-40 +85
Note:
1.VCC voltage during Read can operate across the min and max range but should not exceed ±10% of the programming
(erase/write) voltage.
UNIT
V
°C
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