W49F002U Datasheet, PDF (6/23 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W49F002U
TABLE OF COMMAND DEFINITION⁽¹⁾
COMMAND
NO.
1ST
2ND
3RD
4TH
5TH
6TH
OF CYCLE CYCLE CYCLE CYCLE CYCLE CYCLE
DESCRIPTION Cycles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read
Chip Erase
Sector Erase
Byte Program
1 AIN DOUT
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA⁽³⁾ 30
4 5555 AA 2AAA 55 5555 A0 AIN DIN
Boot Block Lockout 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entry
Product ID Exit ⁽²⁾
Product ID Exit ⁽²⁾
3 5555 AA 2AAA 55 5555 90
3 5555 AA 2AAA 55 5555 F0
1 XXXX F0
Notes:
1. Address Format: A14−A0 (Hex); Data Format: DQ7-DQ0 (Hex)
2. Either one of the two Product ID Exit commands can be used.
3. SA means: Sector Address
If SA is within 3C000 to 3FFFF (Boot Block address range), and the Boot Block programming lockout feature is activated,
nothing will happen and the device will go back to read mode after 100nS.
If the Boot Block programming lockout feature is not activated, this command will erase Boot Block.
If SA is within 3A000 to 3BFFF (Parameter Block1 address range), this command will erase PB1.
If SA is within 38000 to 39FFF (Parameter Block2 address range), this command will erase PB2.
If SA is within 20000 to 37FFF (Main Memory Block1 address range), this command will erase MMB1.
If SA is within 00000 to 1FFFF (Main Memory Block2 address range), this command will erase MMB2.
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