W49F002U Datasheet, PDF (12/23 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W49F002U
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
Voltage on OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VDD +1.0
-1.0 to VDD +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Power Supply
Current
ICC _{CE= OE = VIL, WE= VIH, all DQs open} - 25
50
mA
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD
Current (TTL input)
ISB1 _{CE = VIH, all DQs open}
Other inputs = VIL/VIH
-2
3
mA
Standby VDD
Current
(CMOS input)
ISB2 _{CE = VDD -0.3V, all DQs open}
Other inputs = VDD -0.3V/GND
- 20
100
µA
Input Leakage
Current
ILI VIN = GND to VDD
--
10
µA
Output Leakage
Current
ILO VOUT = GND to VDD
--
10
µA
Input Low Voltage
VIL
-
-0.3 -
0.8
V
Input High Voltage VIH
-
2.0 - VDD +0.5 V
Output Low Voltage VOL IOL = 2.1 mA
--
0.45
V
Output High Voltage VOH IOH = -0.4 mA
2.4 -
-
V
- 12 -