W49F002U Datasheet, PDF (13/23 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W49F002U
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
SYMBOL
TPU. READ
TPU. WRITE
TYPICAL
100
5
UNIT
µS
mS
CAPACITANCE
(VDD = 5.0V, TA = 25° C, f = 1 MHz)
PARAMETER
I/O Pin Capacitance
Input Capacitance
SYMBOL
CI/O
CIN
CONDITIONS
VI/O = 0V
VIN = 0V
MAX.
12
6
UNIT
pf
pf
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise/Fall Time
Input/Output Timing Level
Output Load
AC Test Load and Waveform
CONDITIONS
0V to 3.0V
< 5 nS
1.5V/1.5V
1 TTL Gate and CL = 100 pF for 120 nS;
CL = 30 pF for 70 nS /90 nS
+5V
DOUT
30 pF for 70nS / 90nS
100 pF for 120nS
(Including Jig and Scope)
1.8KΩ
1.3KΩ
Input
3V
0V
Output
1.5V 1.5V
Test Point
Test Point
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Publication Release Date: April 2000
Revision A2