W49F002U Datasheet, PDF (23/23 Pages) Winbond – 256K X 8 CMOS FLASH MEMORY

W49F002U
VERSION HISTORY
VERSION
A1
A2
DATE
Nov. 1999
Apr. 2000
PAGE
-
1, 13−15, 20
14
DESCRIPTION
Renamed from W49F002/B/U/N
Add the 120 nS bin
Change Tbp(typ.) from 10 µS to 35 µS
Change Tec(max.) from 1 Sec to 0.2 Sec
Headquarters
Winbond Electronics (H.K.) Ltd.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Note: All data and specifications are subject to change without notice.
- 23 -
Publication Release Date: April 2000
Revision A2