W29GL256PL9T-TR Datasheet, PDF (59/64 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL256P
7.7 Erase and Programming Performance
PARAMETER
MIN
LIMITS
TYP⁽¹⁾
MAX⁽²⁾
UNITS
Chip Erase Time
80
500
Sec
Sector Erase Time
0.3
2
Sec
Chip Programming Time
48
224
Sec
Word Programming Time
10
200
µs
Total Write Buffer Time
100
µs
ACC Total Write Buffer Time
100
µs
Erase/Program Cycles
100,000
Cycles
Table 7-10 AC Characteristics for Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC. Programming specifications assume
checkerboard data pattern.
2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and including
100,000 program/erase cycles.
3. Erase/Program cycles comply with JEDEC JESD-47E & A117A standard.
4. Exclude 00h program before erase operation.
7.8 Data Retention
PARAMETER
Data Retention
Table 7-11 Data Retention
7.9 Latch-up Characteristics
CONDITION
55°C
MIN
MAX
20
UNIT
Years
PARAMETER
Input Voltage different with GND on #WP/ACC and A9 pins
Input Voltage difference with GND on all normal input pins
VCC Current
All pins included except VCC. Test condition is VCC=3.0V, one pin per test.
Table 7-12 Latch-up Characteristics
MIN
-1.0V
-1.0V
-100mA
7.10 Pin Capacitance
DESCRIPTION
Control Pin Capacitance
Output Capacitance
Input Capacitance
Table 7-13 Pin Capacitance
PARAMETER
CIN2
COUT
CIN
TEST SET
VIN=0
VOUT=0
VIN=0
TYP.
7.5
8.5
6
MAX
9
12
7.5
MAX
10.5V
1.5xVCC
+100mA
UNIT
pF
pF
pF
Publication Release Date: Jul 02, 2014
54
Revision A