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| W29GL256PL9T-TR Datasheet, PDF (32/64 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE | |||
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W29GL256P
CFI mode: System Interface Data Values
Description
Address
Address
(Word Mode) (Byte Mode)
VCC supply minimum program/erase voltage
1Bh
36h
VCC supply maximum program/erase voltage
1Ch
38h
VPP supply minimum program/erase voltage
1Dh
3Ah
VPP supply maximum program/erase voltage
1Eh
3Ch
Typical timeout per single word/byte write, 2n µs
1Fh
3Eh
Typical timeout for maximum-size buffer write, 2n µs
(00h, not support)
20h
40h
Typical timeout per individual block erase, 2n ms
21h
42h
Typical timeout for full chip erase, 2n ms (00h, not
support)
22h
44h
Maximum timeout for word/byte write, 2n times typical
23h
46h
Maximum timeout for buffer write, 2n times typical
24h
48h
Maximum timeout per individual block erase, 2n times
typical
25h
4Ah
Maximum timeout for chip erase, 2n times typical (00h,
not
26h
4Ch
support)
Table 6-20 CFI Mode: System Interface Data Values
Data
0027h
0036h
0000h
0000h
0003h
0004h
0009h
0011h
0003h
0005h
0003h
0002h
Publication Release Date: Jul 02, 2014
27
Revision A
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