W29GL256PL9T-TR Datasheet, PDF (39/64 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL256P
Description
Symbol
VCC=2.7V~3.6V
ALT STD Min Typ Max Units
Accelerated Effective Write
Buffer Operation
Per Word
tWHWH1
4.8
µs
Program Operation
Byte
tWHWH1
6 200 µs
Program Operation
Word
tWHWH1
10 200 µs
ACC 32-Word Program Operation
tWHWH1
100
µs
Sector Erase Operation
tWHWH2
0.3 2 Sec
Sector Erase Timeout
tSEA
50
µs
Release from Deep Power Down mode
tRDP 100
200 µs
Table 7-5
AC Characteristics
Note:
1. The EVIO feature was designed to support voltages from 1.65V to VCC. Device testing is conducted at EVIO=VCC.
7.5.1 Instruction Write Operation
#CE ^VIH
VIL
#WE ^VIH
VIL
#OE ^VIH
VIL
VIH
Addresses
VIL
tCS
tOES
tAS
VIH
Data
VIL
tCWC
tCH
tWP
VALID ADDRESS
tAH
tDS
tDH
DATA IN
tWPH
Figure 7-5 Instruction Write Operation Waveform
Publication Release Date: Jul 02, 2014
34
Revision A