W29GL256PL9T-TR Datasheet, PDF (33/64 Pages) Winbond – 256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE

W29GL256P
CFI mode: Device Geometry Data Values
Description
Device size = 2ⁿ in number of bytes
Flash device interface description (02=asynchronous
x8/x16)
Maximum number of bytes in buffer write = 2ⁿ (00h, not
support)
Number of erase regions within device (01h:uniform,
02h:boot)
Index for Erase Bank Area 1:
[2E,2D] = # of same-size sectors in region 1-1
[30, 2F] = sector size in multiples of 256K-bytes
Index for Erase Bank Area 2
Index for Erase Bank Area 3
Index for Erase Bank Area 4
Table 6-21 CFI Mode: Device Geometry Data Values
Address
(Word Mode)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Address
(Byte Mode)
4Eh
50h
52h
54h
56h
Data
0019h
0002h
0000h
0006h
0000h
58h
0001h
5Ah
00FFh
5Ch
0000h
5Eh
0000h
60h
0002h
62h
0000h
64h
0000h
66h
0000h
68h
0000h
6Ah
0000h
6Ch
0000h
6Eh
0000h
70h
0000h
72h
0000h
74h
0000h
76h
0000h
78h
0000h
Publication Release Date: Jul 02, 2014
28
Revision A