W19B320B Datasheet, PDF (39/51 Pages) Winbond – 32Mbit, 2.7~3.6-volt single bank CMOS flash memory

W19B320BT/B DATASHEET
8.10 Erase and Program Operation
PARAMETER
SYM.
MIN.
70ns
TYP.
Write Cycle Timing (Note 1)
TWC
70
-
Address setup Time
TAS
0
-
Address Setup Timing to #OE low during toggle bit
polling
TASO
15
-
Address Hold Time
TAH
45
-
Address Hold Time From #CE or #OE high during
toggle bit polling
TAHT
0
-
Data Setup Time
TDS
35
-
Data Hold Time
TDH
0
-
Output Enable High During toggle bit polling
TOEPH
20
-
Read Recovery Time Before Write (#OE High to
#WE Low)
TGHWL
0
-
#CE Setup Time
TCS
0
-
#CE HOLD Time
TCH
0
-
Write Pulse Width
TWP
30
-
Write Pulse Width High
TWPH
30
-
Latency Between Read and Write Operation
TSR/W
0
-
Programming Time (Note 2)
Byte
TPB
-
7
Word
TPW
-
9
Accelerated Programming Time
(Noe2)
Byte
Word
TACCP
4
Sector Erase Time (Note 2)
TSE
-
0.4
VDD Setup Time (Note 1)
TVCS
50
-
Write Recovery Time from RY/#BY
TRB
0
-
Program/Erase Valid to RY/#BY Delay
TBUSY
90
-
Notes:
1. Not 100 % tested
2. See the “Alternate #CE Controlled Erase and Program Operations“ section for more information
8.11 Temporary Sector Unprotect
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
210
-
-
-
-
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs
sec
μs
ns
ns
PARAMETER
VID Rise and Fall Time
VHH Rise and Fall Time
#RESET Setup Time for Temporary Sector Unprotect
#RESET Hold Time from RY/#BY High for Temporary
Sector Unprotect
SYM.
TVIDR
TVHH
TRSP
TRRB
MIN.
500
250
4
4
MAX.
-
-
-
-
UNIT
ns
ns
μs
μs
Note: Not 100 % tested1
- 39 -
Publication Release Date:Dec, 22, 2008
Revisionv A5