W19B320B Datasheet, PDF (36/51 Pages) Winbond – 32Mbit, 2.7~3.6-volt single bank CMOS flash memory

W19B320BT/B DATASHEET
8.3 DC Characteristics
8.4 CMOS Compatible
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Input Load Current
ILI VIN =VSS to VDD, VDD = VDD (Max.)
-
-
±1.0 μA
A9 Input Load Current
ILIT VDD = VDD (Max.), A9 = VID (Max.)
-
-
35
μA
Output Leakage Current
ILO VOUT =VSS to VDD, VDD =VDD (Max.)
-
-
±1.0 μA
VDD Active Read Current
(Note 1, 2)
#CE = VIL, #OE = VIH
Byte Mode
ICC1
#CE = VIL, #OE = VIH
Word Mode
5 MHz
1 MHz
5 MHz
1 MHz
-
10
16 mA
2
4
mA
10
16
mA
2
4
mA
VDD Active Write Current
(Note 2, 3)
ICC2 #CE = VIL, #OE = VIH, #WE = VIL
-
15
30 mA
VDD Standby Current (Note2,5) ICC3
#CE = VDD ±0.3V, #RESET = VDD
±0.3V
-
0.2
5
μA
VDD Reset Current (Note2)
ICC4 #RESET = VSS ±0.3V
-
0.2
5
μA
Automatic Sleep Mode
Current (note 2, 4,5)
ICC5 VIH = VDD ±0.3V, VIL = VSS ±0.3V
-
0.2
5
μA
ACC Accelerated Program
Current, Word or Byte
IAcc #CE = VIL, #OE = VIH
ACC Pin
VDD Pin
5
10
mA
15
30 mA
Input Low Voltage
VIL
-
-0.5
-
0.8
V
Input High Voltage
VIH
-
0.7x VDD - VDD +0.3 V
Voltage for #WP/ACC Sector
Protect/ Unprotect and
Program Acceleration
VHH VDD =3.0V ±10%
8.5
-
9.5
V
Voltage for AUTOSELECT
and Temporary Sector
Unprotected
VID VDD =3.0V ±10%
8.5
-
11.5 V
Output Low Voltage
VOL IOL = 4.0 mA, VDD = VDD (Min.)
-
-
0.45 V
Output High Voltage
VOH1 IOH = -2.0 mA, VDD = VDD (Min.)
0.85 VDD -
-
V
VOH2 IOH = -100 μA, VDD = VDD (Min.)
VDD -0.4 -
-
Notes:
1. The I_CC current listed is typically less than 2 mA/ MHz, with #OE at V_IH.
2. Maximum I_CC specifications are tested with V_DD = V_DD max.
3. I_CC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC + 30 ns. Typical sleep mode
current is200 nA.
5. For temperature >70 degree C, Vih(Max.)=Vdd+0.1V and Vil(Min)=Vss-0.1V.
6. Not 100% tested
- 36 -
Publication Release Date:Dec, 22, 2008
Revisionv A5