W9825G2JB Datasheet, PDF (15/41 Pages) Winbond – 2M  4 BANKS  32BITS SDRAM

W9825G2JB
9.5 AC Characteristics and Operating Condition
(VDD = 3.3V  0.3V for -6, VDD = 2.7V~3.6V for -6I/-75/75I, TA = 0 to 70°C for -6/-75, TA = -40 to 85°C for -6I/75I)
PARAMETER
SYM.
Ref/Active to Ref/Active Command
Period
t_RC
Active to precharge Command Period t_RAS
Active to Read/Write Command Delay
Time
t_RCD
Read/Write(a) to Read/Write(b)
Command Period
t_CCD
Precharge to Active Command Period t_RP
Active(a) to Active(b) Command Period t_RRD
-6/-6I
MIN. MAX.
60
42 100000
18
1
18
2
-75/75I
UNIT
MIN. MAX.
65
nS
45 100000 nS
20
nS
1
t_CK
20
nS
2
t_CK
Write Recovery Time
CL* = 2
t_WR
2
CL* = 3
CLK Cycle Time
CL* = 2
10
CL* = 3
t_CK
6
CLK High Level width
t_CH
2
CLK Low Level width
t_CL
2
Access Time from CLK
CL* = 2
CL* = 3
t_AC
Output Data Hold Time
t_OH
3
Output Data High
Impedance Time
CL* = 2
CL* = 3
t_HZ
Output Data Low Impedance Time
t_LZ
0
Transition Time of CLK (Rise and Fall) t_T
Data-in Set-up Time
t_DS
1.5
Data-in Hold Time
t_DH
1
Address Set-up Time
t_AS
1.5
Address Hold Time
CKE Set-up Time
CKE Hold Time
t_AH
1
t_CKS
1.5
t_CKH
1
Command Set-up Time
t_CMS
1.5
Command Hold Time
t_CMH
1
Refresh Time
t_REF
Mode register Set Cycle Time
t_RSC
2
Exit self refresh to ACTIVE command t_XSR
72
1000
1000
6
5
6
5
1
64
2
t_CK
10
1000
nS
7.5
1000
nS
2.5
nS
2.5
nS
6
nS
5.4
nS
3
nS
6
nS
5.4
nS
0
nS
1
nS
1.5
nS
1
nS
1.5
nS
1
nS
1.5
nS
1
nS
1.5
nS
1
nS
64
mS
2
t_CK
75
nS
*CL = CAS Latency
NOTES
8
8
9
9
9
7
7
9
8
8
8
8
8
8
8
8
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Publication Release Date: Apr. 11, 2011
Revision A01