W9825G2JB Datasheet, PDF (13/41 Pages) Winbond – 2M  4 BANKS  32BITS SDRAM

W9825G2JB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
Input/Output Voltage
VIN, VOUT
-0.5 ~ VDD + 0.5 ( 4.6V max.)
V
Power Supply Voltage
VDD, VDDQ
-0.5 ~ 4.6
V
Operating Temperature(-6/-75)
TOPR
0 ~ 70
°C
Operating Temperature(-6I/75I)
TOPR
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Soldering Temperature (10s)
TSOLDER
260
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOUT
50
mA
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -6/-75, TA= -40 to 85°C for -6I/75I)
PARAMETER
SYMBOL
Power Supply Voltage for -6
Power Supply Voltage for -6 (for I/O Buffer)
Power Supply Voltage (for -6I/-75/75I, CL=3)
Power Supply Voltage
(for -6I/-75/75I, CL=3) (for I/O Buffer)
Input High Voltage
Input Low Voltage
VDD
VDDQ
VDD
VDDQ
VIH
VIL
Note: VIH(max) = VDD/ VDDQ+1.5V for pulse width < 5 nS
VIL(min) = VSS/ VSSQ-1.5V for pulse width < 5 nS
MIN.
3.0
3.0
2.7
2.7
2.0
-0.3
TYP.
3.3
3.3
3.3
3.3
-
-
MAX.
3.6
3.6
3.6
UNIT
V
V
V
3.6
V
VDD +0.3
V
0.8
V
9.3 Capacitance
(VDD = 3.3V  0.3V for-6, VDD = 2.7V~3.6V for -6I/-75/75I, f = 1 MHz, TA = 25°C)
PARAMETER
SYMBOL
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , DQM, CKE)
CI
Input Capacitance (CLK)
CCLK
Input/Output capacitance
CIO
MIN.
-
-
-
MAX.
3.8
3.5
6.5
UNIT
pf
pf
pf
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Publication Release Date: Apr. 11, 2011
Revision A01