W9812G2GH Datasheet, PDF (15/42 Pages) Winbond – a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words × 4 banks × 32 bits

W9812G2GH
9.5 AC Characteristics and Operating Condition
(VDD = 3.3V± 0.3V, Ta = 0 to 70°C for -6/-6C/-75, Ta= -40 to 85°C for -6I, Notes: 5, 6, 7, 8, 9, 10)
PARAMETER
Ref/Active to Ref/Active Command
Period
Active to precharge Command Period
Active to Read/Write Command Delay
Time
Read/Write(a) to Read/Write(b)
Command Period
Precharge to Active Command Period
Active(a) to Active(b) Command
Period
Write Recovery Time
CL* = 2
CL* = 3
CLK Cycle Time
CLK High Level width
CL* = 2
CL* = 3
CLK Low Level width
Access Time from
CLK
CL* = 2
CL* = 3
Output Data Hold Time
Output Data High Impedance Time
Output Data Low Impedance Time
Power Down Mode Entry Time
Transition Time of CLK
(Rise and Fall)
Data-in Set-up Time
Data-in Hold Time
Address Set-up Time
Address Hold Time
CKE Set-up Time
CKE Hold Time
Command Set-up Time
Command Hold Time
Refresh Time
Mode register Set Cycle Time
Exit self refesh to ACTIVE command
*CL = CAS Latency
-6
-6C/-6I
-75
SYM.
UNIT NOTES
MIN. MAX. MIN. MAX. MIN. MAX.
t_RC
60
60
65
t_RAS 42 100000 42 100000 45 100000 nS
t_RCD 18
18
20
t_CCD
1
1
1
t_CK
t_RP
18
18
20
t_RRD 12
12
15
2
2
2
t_WR
2
2
2
t_CK
10 1000 10 1000 10 1000
t_CK
6 1000
6 1000 7.5 1000
t_CH
2
2
2.5
9
t_CL
2
2
2.5
9
t_AC
6
5
6
6
nS 10
5
5.4
t_OH
3
3
3
10
t_HZ
3
6
3
6
3 7.5
8
t_LZ
0
0
0
10
t_SB
0
6
0
6
0 7.5
t_T
0.5
1
0.5
1
0.5
1
7
t_DS 1.5
1.5
1.5
9
t_DH 1.0
0.8
1.0
9
t_AS 1.5
1.5
1.5
9
t_AH 1.0
0.8
1.0
9
t_CKS 1.5
1.5
1.5
9
t_CKH 1.0
0.8
1.0
9
t_CMS 1.5
1.5
1.5
9
t_CMH 1.0
0.8
1.0
9
t_REF
64
64
64 mS
t_RSC 12
12
15
nS
t_XSR 72
72
75
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Publication Release Date: Aug. 13,2007
Revision A07