W9812G2GH Datasheet, PDF (14/42 Pages) Winbond – a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words × 4 banks × 32 bits

W9812G2GH
9.4 DC Characteristics
(VDD = 3.3V± 0.3V, Ta = 0 to 70°C for -6/-6C/-75, Ta= -40 to 85°C for -6I)
PARAMETER
SYM.
Operating Current
t_CK = min., t_RC = min.
Active precharge
command cycling
without burst operation
1 Bank Operation
Standby Current
t_CK = min, CS = VIH
CKE = VIH
VIH/L =
VIH(min)/VIL(max.)
Bank: Inactive state
CKE = VIL (Power Down
mode)
Standby Current
CLK = VIL, CS = VIH
CKE = VIH
VIH/L =
VIH(min)/VIL(max)
BANK: Inactive state
CKE = VIL (Power Down
mode)
No Operating Current
CKE = VIH
t_CK = min., CS = VIH(min)
BANK: Active state
(4 banks)
CKE = VIL (Power Down
mode)
Burst Operating Current
t_CK = min.
Read/ Write command cycling
Auto Refresh Current
t_CK = min.
Auto refresh command cycling
Self Refresh Current
Self Refresh Mode
CKE = 0.2V
IDD1
IDD2
IDD2P
IDD2S
IDD2PS
IDD3
IDD3P
IDD4
IDD5
IDD6
-6/-6C/-6I
MAX.
130
45
2
15
2
70
15
200
230
2
-75
MAX.
110
35
2
15
2
65
15
180
210
2
UNIT NOTES
3
3
3
mA
3, 4
3
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable , 0V ≤ VOUT ≤ VDDQ)
LVTTL Output ^″H^″ Level Voltage
(IOUT = -2 mA )
LVTTL Output ^″L^″ Level Voltage
(IOUT = 2 mA )
SYMBOL
II(L)
IO(L)
VOH
VOL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT
µA
NOTES
µA
V
V
- 14 -
Publication Release Date: Aug. 13,2007
Revision A07