W9812G2IB Datasheet, PDF (14/43 Pages) Winbond – 1M × 4 BANKS × 32BITS SDRAM

W9812G2IB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Input/Output Voltage
VIN, VOUT -0.5 ~ VDD + 0.5 (< 4.6V max.)
V
1
Power Supply Voltage
VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature(-6/-75)
Operating Temperature(-6I/-6A)
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
TOPR
TOPR
TSTG
TSOLDER
PD
0 ~ 70
-40 ~ 85
-55 ~ 150
260
1
°C
1
°C
1
°C
1
°C
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note:
1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -6/-75, TA = -40 to 85°C for -6I/-6A)
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
NOTES
Power Supply Voltage
VDD
2.7
I/O Buffer Supply Voltage VDDQ
2.7
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
-0.3
Output logic high voltage
VOH
2.4
Output logic low voltage
VOL
-
Input leakage current
II(L)
-5
Output leakage current
IO(L)
-5
3.3
3.6
V
3.3
3.6
V
-
VDD + 0.3
V
-
0.8
V
-
-
V
-
0.4
V
-
5
µA
-
5
µA
1
2
IOH= -2mA
IOL= 2mA
3
4
Notes:
1. VIH (max.) = VDD/VDDQ+1.5V for pulse width < 5 nS.
2. VIL (min.) = VSS/VSSQ-1.5V for pulse width < 5 nS.
3. Any input 0V<VIN<VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Output disabled, 0V ≤ VOUT ≤ VDDQ.
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Publication Release Date: Mar. 09, 2010
Revision A04