MMBT2222ADW1T1 Datasheet, PDF (6/6 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT2222A^FD^MW_T¹_H1²T_R⁰1_U^-M+
D_1.0u_Aa_SUl _RG_FAe_Cn_E e_MOra_UNl_TP_Su_CHr_Op_To_TKs_Ye_BAT_Rr_Ra_IEn_Rs_REis_CTto_IFIr_Es_{RS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOT–363 • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.087(2.20)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental sta.n0d7a1rd(s1o.8f 0)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
•
Mounting
Position
:
.030(0.75)
Any
.021(0.55)
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.010(0.25)
.003(0.08)
MAXIMUM RA_.T₀IN₅₆G₍S_1.A₄N₀₎D ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperat_.u₀re₄u₇n₍le₁s_.s₂o₀th₎erwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurren^.0t P⁰e⁴ak⁽⁰R^.e¹ve⁰rs⁾e^MV^Aolt^Xag^.e
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 Volts
VRMS
14
21
28
35
42
56
70
105
140 ^Volts
VDC
20
30
40
50
60
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
.016(0.40) _{Peak Forward Surge Current 8.3 ms single half sine-wave IFSM}
superimposed on rated load (JEDEC method)
.004(0.10)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
Dimensions in inches and (millimeters) CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-0
WILLAS ELECTRONIC CORP.