MMBT2222ADW1T1 Datasheet, PDF (3/6 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT2222A^FD^MW_T¹_H1²_RT⁰_U1^-M+
1^D.0^uA ^aSU^lR^GFA^eCⁿE M^eO^rU^aN^lT^PSC^uH^rO^pTT^oK^sY^eBA^TR^rR^aIEⁿR ^sREⁱC^sT^tI^oFIE^rR^sS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SMALL_o–_pS_tI_iG_mN_izA_e L_boC_aH_rdA_sR_pA_acC_eT_. ERISTICS
Curre^•nt^L–G^owain^po–^wB^ea^rnd^low^si^sd^,th^hP^igr^hod^eu^fc^fit^c(ⁱN^eoⁿt^ce^y3^. )
(I_C ^•= ^H20^igm^hA^cd^uc^r,^reVⁿ_C^t_E^c=^a2^p0^abVⁱd^lic^ty, ^,f ^l=^ow10^f0^orM^wH^az^r)^{d voltage drop.}
• High surge capability.
Ou(tVp_Cu_{••B}t
Capacitance
UG⁼lu¹tra⁰ar^Vdhdriigcn,hg^I-^Esfop^=re0oe,vdfe=sr
v₁o_.0lt_Mag_He_z)protection.
witching.
Input •CaSpilaicciotannecepitaxial planar chip, metal silicon junction.
(V_{E•B L}=_e0_a.5_d-V_frd_ec_e, I_pCa=_rt0_s,_mf =_ee1._t0_eM_nvH_irz_o) _{nmental standards of}
Input
(I_C
(I_C
•^I==mRH^M_11p.0oa^e0IH^L_l^dm_om^-aSg^S_AnAepd^Tc_ndr_ce^D_co_,f,rd^-_VeV¹u_CeCc⁹_Etp_E⁵f_=r⁰o_=o⁰r_1d1p_0u^/₀²ac_VVc²_{t d}kf⁸_doci_cnr_,,g_fpf=ac=oc_11kd.i.0en_0gks_kHuc_Hf_zofzi_{)dx) e"Gsu" ffix}
"H"
Mechanical data
Voltage Feedback Ratio
(I_C ^•= ^E1.^p0^om^xyAd^: c^U, ^LV⁹_C⁴_E^-=^V010^raV^td^ec^d, ^ff^la=^m1.^e0^rk^eH^taz)^rdant
(I_{C •}= _C10_asm_eA_:d_Mc,_oV_ldCeEd=_p1_l0_asV_td_icc_,, _Sf =_O1_D.0_-1k₂H₃z_H)
Small_•–S_Ti_egn_rmal_i
n^Ca^ul^rs^re:ⁿP^tl^Gat^aeⁱⁿd
te
rminals,
solderable
per
,
MIL-STD-750
(I_C
(I_C
=
=
11.00mmAAddcc,,VV_{CMCEEe==th11o00dVV2dd0cc2,,f6}f==11..00kkHHzz))
• Polarity : Indicated by cathode band
Output Admittance
(I_C ^•= ^M1.^o0^umⁿA^tidⁿc^g, V^P_C^o_E^si=^tio1ⁿ0 ^:V^Adⁿc,^yf = 1.0 kHz)
(I_{C •}= _W10_em_igA_hd_t c_:,_AV_pCpEro=_x1_im0 V_ad_tec_d, f₀=_.01₁.0₁ k_gH_raz)_m
Package outline
SOD-123H
f_T
C_obo
C_ibo
3⁰⁰0^..110^{4360((33..73))}
–
MHz
0.012(0.3) Typ.
–
8.0
pF
0.071(1.8)
0.056(1.4)
–
25
pF
h_ie
kΩ
2.0
8.0
0.25
1.25
h_re
0.04X0(11.00) ^–4
–
8.0
0.024(0.6)
0.031(0.8) Typ.
–
4.0
0.031(0.8) Typ.
h_fe
–
50
300
75
375
Dimensions in inches and (millimeters)
h_oe
mmhos
5.0
35
25
200
Collector Base Time Constant
(I_E = 20 mAd^Mc,^AV^X_CB^IM= ^U20^MVd^Rc,^Af^T=^I3^N1^G.8^SMH^Az^N) ^D
ELECTRICAL
rb,
CHARACTERISTICS
C_c
–
ps
150
Ra_Nt_oin_isg_es _Fa_it_g2_u5_re℃ ambient temperature unless otherwise specified.
NF
dB
Sing₍l_Ie_C p₌h₁a₀s₀e _mh_Aa_dlf_cw_, a_Vv_Ce_E, ₌60₁H₀z_V, _dre_c,si_Rst_Siv₌e ₁o_.f₀in_kd_Ωu_,c_ft₌ive_1.l₀oa_kd_H._z)
–
4.0
F_So_Wr c_Ia_Tp_Ca_Hci_Iti_Nve_Glo_Ca_Hd,_Ad_Rer_Aat_Ce_Tc_Eur_Rre_ISnt_Tb_Iy_C2_S0%
Delay Time
RATINGS
Marking Code
Ma^Rxⁱi^sm^eu^Tm^imR^eecurrent Peak Reverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH
(V_CICC==V1R35_R00_MVmdAc,dVc,_{12BIE20B(1of=f) 1=5–13m030}.A5dVcd)c,
14
40
FM₁15₅0-_tM_dH
50 ^tr
FM160-MH_–FM180-MH
16
18
60 ^– 80
F₁M₀1100-MH
10
25 ₁₀₀
FM1150-MH
ns¹¹⁵
150
FM1200-MH
120
200
UNIT
Volts
Ma^Sx^ti^om^ru^am^geR^TM^imS^eVoltage
Ma_Fx_aim_ll u_Tm_imD_eC Blocking Voltage
(V_CC =^VR3^M0^SVdc, I_C¹=⁴ 150 mA²¹dc,
28
I_B1 =_VI_DBC2 = 15 m₂A₀dc) ₃₀
40
35 ts 42 – 56 22570
50 t_f 60 – 80 60100
105
ns
150
140 ^Volts
200 ^Volts
M_3.ax_fi_Tm_iu_sm_deA_fiv_ne_er_dag_ae_sF_thor_ew_fa_rerd_quR_ee_nc_cti_yfie_ad_{t w}Cu_hr_icre_hn_|t_{hfe| extrapola}I_tO_{es to unity.}
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-0
WILLAS ELECTRONIC CORP.