MMBT2222ADW1T1 Datasheet, PDF (5/6 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT2222A^FD^MW_T¹_H1²_RT⁰1_U^-M+
D_1.0u_Aa_SUl_RG_FAe_Cn_{E M}e_Or_Ua_Nl_TP_SCu_Hr_Op_To_TKs_Ye_BAT_Rr_Ra_IEn_R s_REis_CTt_Io_FIr_Es_{RS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
10 ^Features
10
•
8.0^•
Batch process design, excellent po
better reverse leakage current and
Low profile^ICsu⁼r¹f^.a⁰c^me^Am^{, R}o^Su⁼n¹t⁵e⁰d^Ωapplic
optimize bo⁵a⁰⁰rd^µAs^,p^RaSc⁼e². ^{00 Ω}
awt^{RRRhtSSSeieor===rndmSROiiOEPsan}_SUT^slo_IIR^ir_SM^preCTUdas_AEMet_N^iisro_C^ttna_Eonocffee.r
s
8.0
• Low power¹l⁰o⁰s^µs^A, ^,h^Rig^Sh⁼ e^2.f⁰fi^kc^Ωiency.
6.0•
High
c
ur
50
rent
c^µa^Ap^{, R}a^Sb
=
il
4.0
ity,
kΩ
low
forward
voltage
drop.
6.0
• High surge capability.
4.0^{• Guardring for overvoltage protection.}
4.0
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
2.0^{• Lead-free parts meet environmental standards of}
2.0
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0 _{Halogen free product for packing code suffix "H"}
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
50
Mechanical data
f, FREQUENCY (kHz)
• Epoxy : UL94-V0 rated flame retardant
• Case : Mol^Fde^igd^up^rl^eas⁵t^.ic^F,^rS^eO^quD^e-1ⁿ2^c3^yH^Effects
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Package outline
f = 1.0 kHz
I_C = 50 µA
100 µA
500 µA
1.0 mA
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R_S, SOURCE RESISTANCE (OHMS)
0.040(1.0)
0.024(0.6)
Figure 6. Source Resistance Effects
0.031(0.8) Typ.
0.031(0.8) Typ.
30
Method 2026
• Polarity : Indicated by cathode band
20_{• Mounting Position : Any}
• Weight : Approximated 0.011 g^Craebm
500
V_CE = 2^D0ⁱV^{mensions in inches and (millimeters)}
T_J = 25°C
300
10
MAXIMUM RATINGS AND ELECTRICAL CHA²⁰R⁰ ACTERISTICS
Ratin7g.0s at 25℃ ambient temperature unless otherwise specified.
Sing₅le_.0phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
100
3.0
Marking Code
RATINGS
SYMB^CO^cbL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
70
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UNIT
12
13
14
15
16
18
10
115 120
Maxim_2.u₀m Recurrent Peak Reverse Voltage
VRRM
20
Maximum^0.1RMS^0.2Vo⁰lt^.a³ge^{0.5 0.7 1.0 2.0 3.0 5.0 7.0 10} VRM²S^{0 30} 1⁵4⁰
Maximum DC Blocking Vol^Rta^Eg^Ve^{ERSE VOLTAGE (VOLTS)} _VDC
20
30₅₀
21 ^1.0
30
40
28^2.0
40
50
60
80
100
3.0₃₅ 5.0 7.₄0₂ 10 ₅₆20 30 ₇₀ 50
5^IC0^{, COLLEC}6^T0^{OR CURRE}8^N0^{T (mA)} 100
150
70 ₁1₀0₅0
150
200 Volts
140 ^Volts
200 ^Volts
Maximum Average ForwaFrdigRuercetifi7e.dCCaurpreanctitances IO
Figure 8. Current–Ga1i.n0 Bandwidth Product
Amps
Peak ₁F_.o₀rward Surge Current 8.3 ms single half sine-wave
superimpose_Td_J o₌n₂r₅a_°t_Ced load (JEDEC method)
Typic₀a_.l₈Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating ^VT^Be^Em^(sap^te^{) @}rat^Iu^Cr^/e^IBR⁼a¹n⁰ge
Stora⁰g^.e⁶ Temperature Range
IFSM
RΘJA
CJ
1^T.^J0 V
TSTG
+0.5
0
-55 to_-ā0+_.5125
30
40 _{RqVC for VCE(sat)}
120
-55 to +150
- 65 to +175
Amps
℃/W
PF
℃
℃
V_BE(on) @ V_CE = 10 V
0.4
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated^0.D² C Blocking Voltage
@T A=125℃
-ā1.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
-ā1.5^0.50
0.70
0.85
0.9
0.92 Volts
IR
-ā2.0
0.5
10 R_qVB for V_BE
mAmps
NOTES₀: ^{VCE(sat) @ IC/IB = 10}
1- Measu₀r_.e₁d a₀t_.21 MH₀Z_.5 an₁d_.0ap₂p_.l₀ied re₅v_.0erse₁₀volt₂a₀ge of₅4₀.0 ₁V₀D₀C._{200 500 1.0 k}
-ā2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
2- Thermal Resistance FromI_C,JCunOcLtLioEnCtToOARmCbUieRnRt ENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
2012-0
WILLAS ELECTRONIC CORP.