MMBT2222ADW1T1 Datasheet, PDF (4/6 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT2222A^FD^MW_T¹_H1²_RT⁰_U1^-M+
1D.0uA aSUlRGFAeCEnMeOrUaNlTPSCuHrOpTToKsYeBATRRraIEnR RsEiCsTtIoFIErRsS -20V- 200V
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
100b0etter reverse leakage current and thermal resistance.
•70L0ow profile surface mounted application in order to
50o0ptimize board space.
Package outline
SOD-123H
•₃₀L₀ow power loss, high efficiency.
•₂₀H₀igh current capability, low forward voltage drop.
• High surge capability.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Guardring for overvoltage protection.
•¹⁰U⁰ltra high-speed switching.
•
70
Sil
icon
ep
itaxial
plana
r
chip,
metal
si
licon
ju
nct
ion
.
•
50
Lead-free
pa
rts
me
et
environmen
tal
s
tandards
of
3^M0 ^{IL-STD-19500 /228}
• ₂R₀oHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
M10echanical data
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
• Epoxy : UL94-V0 rated flame retardant
I_C, COLLECTOR CURRENT (mA)
• Case : Molded plastic, SOD-123H
Figure 1. D, C Current G^0.a⁰³i¹n^{(0.8) Typ.}
• Terminals :Plated terminals, solderable per MIL-STD-750
200 300 ^0.05⁴0⁰0^(1.07⁾ 00 1.0
0.024(0.6)
k
0.031(0.8) Typ.
Method 2026
•₁P_.0olarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
•0W.8 eight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.6
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capa⁰c^.4itive load, derate current by 20%
Marking C⁰o^.2de
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum R0MS Voltage
Maximum D^0.C⁰⁰B⁵locking^0.0V¹oltage ^{0.02 0.03 0.05}
Maximum Average Forward Rectified Current
VRMS
0.1
VDC
IO
14
21
28
0.2₂₀0.3 ₃0₀.5
4¹0^.0
I_B, BASE CURRENT (mA)
35
42
5²0^{.0 3.0} 60 ^5.0
1.0
56
80 ¹⁰
70
105
140
100^{20 30} 150 ⁵⁰ 200
Volts
Volts
Amps
Figure 2. Collector Saturation Region
Peak Forward Surge Current 8.3 ms single half sine-wave
superimp²o⁰s⁰ed on rated load (JEDEC method)
IFSM
Typical T₁h₀e₀rmal Resistance (Note 2)
RΘJA
I_C/I_B = 10
T_J = 25°C
Typical Ju₇n₀ction Capacitance (Note 1)
Operating₅₀Temperature Range
Storage T₃e₀mperature Range
CJ
t_r
t_d
t_d
@
@
@
VVV_CEECBB((=_ooffff3₎₎ 0==_TSV_T20T.J0GV
500
300
200
-55 to +125
100
70
30
40
t′_s = t_s - 1/8 t_f 120
- 65 to +175
V_CC = 30 V
I_C/I_B = 10
I_B1 = I_B2
-55 to +150T_J = 25°C
Amps
℃/W
PF
℃
℃
20
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-M⁵H⁰
FM140-MH
t_f
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
UNIT
Maximum₁F₀orward Voltage at 1.0A DC
VF
Maximum_7.A₀ verage Reverse Current at @T A=25℃
IR
Rated DC_5.0Blocking Voltage
@T A=125℃
NOTES: ^3.0
1- Measur2e.d0 at 1 MHZ and applied reverse voltage of 4.0 VDC.
5.0 7.0 10
20 30 50 70 100 200 300 500
2- Thermal Resistance From Ju_ICn_,c_Ctio_On_LLto_EA_Cm_TOb_Rien_Ct_{URRENT (mA)}
300.50
20
10
7.0
5.0
5.0 7.0 10
0.70
0.85
0.5
10
0.9
0.92 Volts
mAmps
20 30 50 70 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 3. Turn–On Time
Figure 4. Turn–Off Time
2012-0
WILLAS ELECTRONIC CORP.