MMBT2222ADW1T1 Datasheet, PDF (1/6 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT2222AD^FW^M_T¹1_H²T_R⁰1_U^-M+
D_1.u_0Aa_Sl_UG_RFe_ACn_Ee_Mr_Oa_Ul_NP_{T S}u_Cr_Hp_OTo_Ts_KYe_BT_ARr_Ra_IEn_Rs_Ri_Es_Ct_To_IFr_IEs_{RS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
NPN Silicon optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
We d^•e^Hc^igla^h r^se^urgth^e a^cat^pm^aba^ilit^te^y.rial of product compliance
with ^•R^GO^uaH^rdS^rinr^ge^fq^oru^oi^vre^erm^voe^ltan^gt^es^p. ^rotection.
• Ultra high-speed switching.
Pb-F_•• r_LSe_eilaie^cdo-p^nfreea_epc^iptk^aaxra^itasg^lmpe^leaei^nts^aerna^cvhv_iripoa^,ni^mmla^eetnb^atlal^se_{lislitcaonndjaurndcstioofn.}
RoH_•S_R^M_o^Ip_H^L-r_S^So_p^Td_r^D_ou_d^-1_uc_c⁹t_t⁵_f⁰f_oo⁰_{r p}r^/2_ap_c²_k⁸a_inc_g k_coin_deg_suc_ffo_ix d_"Ge_" suffix ”G”
Halog^He^aln^ogefrⁿe^fre^ee p^prr^oo^dud^cu^{t fo}c^rt^pf^ao^ckrⁱⁿp^g a^coc^deki^sn^ufg^fix c^"Ho^" de suffix “H”
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
65
4
1
2
3
0.071(1.8)
0.056(1.4)
SOT-363
0.040(1.0)
0.024(0.6)
MAXIM• CUaMseR:AMToINldGeSd plastic, SOD-123H
,
• TerminaRlsat:iPnglated terminals, solSdeymrabbolel per MVIaLl-uSeTD-750Unit
0.031(0.8) Typ.
0.031(0.8) Typ.
Collector–Emitter Vo^Mlta^eg^the^{od 2026}
V_CEO
Collec^•to^Pr–^oB^laa^rsⁱe^tyV^:o^Ilⁿta^dg^ice^{ated by cathode ba}Vⁿ_C^d_BO
• Mounting Position : Any
Emitter–Base Voltage
V_EBO
• Weight : Approximated 0.011 gram
Collector Current – Continuous
I_C
40
Vdc
75
Vdc
6.0
Vdc
600
mAdc
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
(3)
(2)
(1)
THERMAL CHARARCATIENRGISSTICS
Marking Code _{Characteristic}
Ma_Tx_oim_tau_lm_PaR_ce_kc_au_grr_ee_Dnt_isP_se_ipa_ak_tR_ioe_nv₍e_Nrs_oe_teV₁o₎ltage
MaximTu_Am= R25M°SCVoltage
Ma_Txi_hm_eu_rmm_aD_l C_ReB_slo_isc_tk_ai_nn_cg_eV_, oltage
Maxim^Juuⁿm^ctA^iovⁿer^ta^og^Ae^mFo^br^iewⁿa^trd Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MHQF₁M160-MH FM180-MH FM1100-MHQF₂M1150-MH FM1200-MH UNIT
Symbol
Max 12 Un1i3t
14
15
16
18
10
115 120
P_D ^VRRM 150 ²⁰
mW³⁰
40
50
60
VRMS
14
21
28
35 ⁽⁴⁾42
80
100
150
200 Volts
5⁽⁵6⁾
70 ⁽⁶⁾ 105
140 ^Volts
R_qJA ^VDC 833 ²⁰ °C/³W⁰
40
50
60
80
100
150
200 ^Volts
IO
1.0
Amps
Pea^Jk^uFⁿo^cr^tw^ioaⁿrd^aS^ndurg^Se^toC^raur^gr^een^Tt^e8^m.3^pm^es^ras^ti^ung^rele half sine^T-w^J,av^Te^stg
–55 to +150
IFSM
°C
30
superimposed on rated load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
St_Oor_Rag_De_ET_Rem_INp_Gera_It_Nur_Fe_OR_Ran_Mge_ATION
RΘJA
CJ
TJ
TSTG
-55 to +125
40
120
- 65 to +175
-55 to +150
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forwar^Dd ^eV^volⁱt^ca^ege at 1.0A DC
Maximum A_Mve_Mra_Bg_Te₂R₂e₂v₂e_Ars_De_WCu₁r_Tre₁nt at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
V^SF ^hipping
0.50
0.70
0.85
0.9
0.92 Volts
300_IR0/Tape & Reel
0.5
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-0
WILLAS ELECTRONIC CORP.