MMBT2222ADW1T1 Datasheet, PDF (2/6 Pages) WILLAS ELECTRONIC CORP – Dual General Purpose Transistors

WILLAS
MMBT2222AD^FW^M_T1¹_HT²_R⁰1_U^-M+
D₁u_.0Aa_Sl_UG_RFe_An_CEe_Mr_Oa_Ul_NP_T u_SCr_Hp_Oo_TTs_Ke_{Y B}T_Ar_Ra_RIn_ERs_Ris_ECt_To_IFr_Is_{ERS -20V- 200V}
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
ELECTR^••IC_SUiA^lltircL^aoC^hniH^gehA_p-iR_tsapA_xeiC_aeT_ldpE^slR_awnI^itS_acrT^hcIⁱC^nhgiS_{p. ,}(_mT_Ae=_ta2_l5_s°_iC_licu_on_nle_js_us_no_ct_th_ioe_nrw_. ise noted)
• Lead-free parts meet en^Cv^hir^ao^rn^am^cte^en^rit^sa^tl^icstandards of
Symbol
Min
Max
0.071(1.8)
0.056(1.4)
Unit
OFF CH_•A_R^MR_o^IA_H^LC^-_S^ST_p^TE_r^D_oR_d^-I¹_uS_c⁹T_t⁵_fI⁰_oC⁰_rS_p^/2_ac²_k⁸_{ing code suffix "G"}
Collector–_HEm_ali_ott_ge_er_nB_fr_re_ea_ekd_po_row_dn_ucV_to_fl_ota_rg_pe_{acking code suffix "H"}
(I_C = 1_M0 m_eA_cdc_h, I_{aB n}= 0_ic) _{al data}
V_(BR)CEO
40
–
Vdc
Collector_•–_EBa_ps_oe_xyBr_:e_Ua_Lkd₉o₄w_-Vn₀Vo_ralt_ta_eg_de _{flame retardant}
(I_C = 10 mAdc, I_E = 0)
• Case : Molded plastic, SOD-123H
Emitter–Base Breakdown Voltage
,
(I_E = 1^•0^Tm^eA^rd^mcⁱ,ⁿI_C^al=^s 0^:P) ^{lated terminals, solderable per MIL-STD-750}
Method 2026
Collector Cutoff Current
(V_CE =^• 6^P0^oV^lad^rc^it,^yV^:_E^I_Bⁿ_(o^d_fⁱ_f)^c=^at3^e.^d0 ^bV^ydc^c)^{athode band}
V_(BR)CBO
75
0.031(0.8) Typ.
V_(BR)EBO
6.0
–
00..00^V2440^d((01^c..60))
0.031(0.8) Typ.
–
Vdc
I_CEX
–
10
nAdc
Dimensions in inches and (millimeters)
Collector^• C^Mu^oto^uffⁿC^tiuⁿr^gre^Pn^ot ^{sition : Any}
I_CBO
(V_CB =• 6W0eVigdch,tI:_EA=p0p)roximated 0.011 gram
(V_CB = 60 Vdc, I_E = 0, T_A = 125°C)
Emitter Cutoff Cur^Mre^Ant^{XIMUM RATINGS AND ELECTRICAL CHARACTERISTI}I^C_EB^S_O
R(aVti_En_Bgs= a3t.025V℃dc, aI_Cm=bi0e)nt temperature unless otherwise specified.
mAdc
–
0.01
–
10
–
100
nAdc
B^Saⁱsⁿe^glC^eu^pt^hof^af^sC^eu^hrr^ae^ln^f t^{wave, 60Hz, resistive of inductive load.}
F₍o_Vr_Cc_Eap₌a₆c₀iti_Vve_dclo_, a_Vd_E,_Bd_(oe_fr_f)a₌te₃c_.0ur_Vre_dn_ct₎ by 20%
I_BL
–
20
nAdc
ON CHARACTERIST^RIC^ATS^INGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
D^MC^arC^kiu^ngrre^Cn^ot^dG^eain
Ma_(Ix_Cim₌u₀m_.1R_mec_Au_drr_ce_,n_Vt_CP_Eea₌k₁R₀e_Vv_der_cs₎e Voltage
Ma(Ix_Cim=u1m.0RmMASdVco, lVta_Cg_Ee= 10 Vdc)
12
VRRM
20
13
30
14
40
h_51F05E
16
60 ₃₅
18
80 _–
10
100
–
115
150
120
200 Volts
VRMS
14
21
28
35
42 50 56 – 70
105
140 ^Volts
Ma^(IxCim⁼u¹m⁰D^mC^AB^dl^co^,c^VkiCnEg ⁼Vo¹l⁰ta^Vge^dc)
(I_C = 10 mAdc, V_CE = 10 Vdc, T_A = –55°C)
Ma_(Ix_Cim₌u₁m₅₀Av_me_Ara_dg_ce_, F_Vo_Cr_Ewa₌rd₁₀R_Vec_dt_cif₎ie₍d_NC_otu_err₂e₎nt
VDC
20
30
IO
40
50
60 ⁷⁵
35
1¹0^.00
80 ^– 100
–
300
150
200 ^Volts
Amp
Pe⁽⁽a^IICCk
= 150 mAdc,
F₌o₅rw₀a₀rd_mS_Au_drg_ce_,
VV_CCCuEErre==_nt11₈.00_.3VVmddcsc)_s)(_in(NN_golo_etteeha22l)f)_sine-wave
superimposed on rated load (JEDEC method)
IFSM
50
–
430
–
Amp
C_TTyyo((_pplIIl_CCiie_ccc_aa==tllo15_TJr_{u50–hn00Eecr}mmm_mtioiAA_at_nt_ledd_RCrcc_e,,SasIIpa_BBiastu==_ctar_ita_n15at_c50nio_{ecmmne(NAAV(Noddotcco}l_et))_ta_e2g₎₁e₎(Note 2)
Operating Temperature Range
Base–Emitter Saturation Voltage (Note 2)
Sto_(Ir_Cag₌e₁T₅e₀m_mp_Aer_da_ctu_, r_Ie_B R₌a₁n₅g_me _Adc)
RΘJA
CJ
TJ
TSTG
-55 to +125
V_CE(sat)
V_BE(sat)
4_–0
1_–20
- 65₀t_.o₆ +175
Vdc
0.3
1.0
-55 to +150
Vdc
1.2
℃/W
PF
℃
℃
(I_C = 500 mAdc, I_B = 50 mAdc)
–
2.0
2. Pulse Test: Pulse W^CHid^Ath^R≤^AC3^T0^E0^Rm^Is^S,^TD^ICut^Sy Cycle ≤ 2.0%^S.^YMBOL
Maximum Forward Voltage at 1.0A DC
VF
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.50
0.70
0.85
0.9
0.92
UNIT
Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-0
WILLAS ELECTRONIC CORP.