WCMB2016R4X Datasheet, PDF (3/11 Pages) Weida Semiconductor, Inc. – 128K x 16 Static RAM

WCMB2016R4X
Electrical Characteristics Over the Operating Range
WCMB2016R4X
Param-
eter
Description
Test Conditions
Min.
Typ.^[4]
Max.
Unit
V_OH
Output HIGH Voltage I_OH = −0.1 mA
V_CC = 1.65V
1.4
V_OL
Output LOW Voltage I_OL = 0.1 mA
V_CC = 1.65V
V_IH
Input HIGH Voltage
1.4
V_IL
Input LOW Voltage
−0.2
I_IX
Input Leakage Current GND < V_I < V_CC
−1
I_OZ
Output Leakage Cur- GND < V_O < V_CC, Output Disabled
−1
rent
V
0.2
V
V_CC + 0.2V
V
0.4
V
+1
µA
+1
µA
I_CC
V_CC Operating Supply
Current
f = f_MAX = 1/t_RC
f = 1 MHz
V_CC = 1.95V
I_OUT = 0 mA
CMOS levels
1.5
6
mA
0.5
2
mA
Automatic CE
CE > V_CC−0.2V,
I_SB1
Power-Down Current— V_IN>Vcc-0.2V, V_IN<0.2V
CMOS Inputs
f = f_MAX (Address and Data Only),
f=0 (OE, WE, BHE and BLE)
Automatic CE
CE > V_CC−0.2V
I_SB2
Power-Down Cur-
V_IN > V_CC−0.2V or V_IN < 0.2V,
rent— CMOS Inputs f = 0, Vcc=1.95V
1
8
µA
Capacitance^[5]
Parameter
C_IN
C_OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T_A = 25°C, f = 1 MHz,
V_CC= V_CC(typ)
Max.
Unit
6
pF
8
pF
Thermal Resistance
Description
Test Conditions
Thermal Resistance (Junction Still Air, soldered on a 4.25 x 1.125 inch, 4-layer printed
to Ambient)^[5]
circuit board
Thermal Resistance (Junction
to Case)^[5]
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Θ_JA
Θ_JC
BGA
55
16
Units
°C/W
°C/W
3