WCMB2016R4X Datasheet, PDF (1/11 Pages) Weida Semiconductor, Inc. – 128K x 16 Static RAM

WCMB2016R4X
Features
• Low voltage range:
— 1.65V−1.95V
• Ultra-low active power
— Typical Active Current: 0.5 mA @ f = 1 MHz
— Typical Active Current: 1.5 mA @ f = f_max
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The WCMB2016R4X is a high-performance CMOS static
RAM organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This device is ideal for portable applications such as cellular
telephones. The device also has an automatic power-down
feature that significantly reduces power consumption by 99%
when addresses are not toggling. The device can also be put
into standby mode when deselected (CE HIGH or both BLE
Logic Block Diagram
DATA IN DRIVERS
A₁₀
A₉
A₈
A₇
A₆
128K x 16
A₅
RAM Array
A₄
2048 X 1024
A₃
A₂
A₁
A₀
128K x 16 Static RAM
and BHE are HIGH). The input/output pins (I/O₀ through I/O₁₅)
are placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High En-
able and Byte Low Enable are disabled (BHE, BLE HIGH), or
during a write operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O₀ through I/O₇), is
written into the location specified on the address pins (A₀
through A₁₆). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O₈ through I/O₁₅) is written into the location
specified on the address pins (A₀ through A₁₆).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O₀ to I/O₇. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O₈ to I/O₁₅. See the
Truth Table at the back of this data sheet for a complete de-
scription of read and write modes.
The WCMB2016R4X is available in a 48-ball FBGA package.
I/O₀–I/O₇
I/O₈–I/O₁₅
COLUMN DECODER
Power -Down
Circuit
CE
BHE
BLE
BHE
WE
CE
OE
BLE