WCMB2016R4X Datasheet, PDF (2/11 Pages) Weida Semiconductor, Inc. – 128K x 16 Static RAM

WCMB2016R4X
Pin Configuration^{[1, 2]}
FBGA
Top View
12
34
5
6
BLE OE ^A0 ^A₁ ^A2 NC
A
I/O₈ BHE A₃ A₄ CE I/O₀
B
I/O₉ I/O₁₀ A₅ A₆ I/O₁ I/O₂
C
V_SS I/O₁₁ NC A₇ I/O₃ V_ccq
D
V_CC I/O₁₂ DNU A₁₆ I/O₄ ^Vssq
E
I/O₁₄ I/O₁₃ A₁₄ A₁₅ I/O₅ I/O₆
F
I/O₁₅ NC ^A₁₂ A₁₃ WE I/O₇
G
NC ^A₈ ^A9 ^A10 ^A11 NC
H
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage to Ground Potential .................−0.2V to +2.4V
Operating Range
Device
WCMB2016R4X
Range
Industrial
DC Voltage Applied to Outputs
in High Z State^[3]........................................ −0.2V to V_CC + 0.2V
DC Input Voltage^[3].................................... −0.2V to V_CC + 0.2V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Ambient Temperature
−40°C to +85°C
V_CC
1.65V to 1.95V
Product Portfolio
Product
V_CC Range
Speed
V_CC(min.) V_CC(typ.)^[4] V_CC(max.)
WCMB2016R4X 1.65V
1.80V
1.95V
70 ns
Power Dissipation (Industrial)
Operating (I_CC)
f = 1MHz
Typ.^[4] Max.
f = f_max
Typ.^[4] Max.
Standby (I_SB2)
Typ.^[4] Max.
0.5 mA 2 mA 1.5 mA 6 mA
1 µA 8 µA
Notes:
1. NC pins are not connected to the die.
2. E3 (DNU) can be left as NC or Vss to ensure proper application.
3. V_IL(min) = −2.0V for pulse durations less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V_CC = V_CC(typ), T_A = 25°C.
2