VSC7125 Datasheet, PDF (10/16 Pages) Vitesse Semiconductor Corporation – 1.0625 Gbits/sec Fibre Channel Transceiver

1.0625 Gbits/sec Fibre
Channel Transceiver
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7125
DC Characteristics (Over recommended operating conditions).
Parameters
Description
Min Typ Max Units
Conditions
V_OH
Output HIGH voltage (TTL) 2.4
—
—
V
V_OL
Output LOW voltage (TTL)
—
—
0.5
V
∆V_OUT751
TX Output differential peak-
to-peak voltage swing
1200
—
2200 mVp-p
∆V_OUT501
TX Output differential peak-
to-peak voltage swing
1200
—
2200 mVp-p
∆V_IN1
Receiver differential peak-to-
peak Input Sensitivity RX
300
— 2600 mVp-p
V_IH
V_IL
I_IH
I_IL
V_DD
Input HIGH voltage (TTL)
2.0
—
5.5
V
Input LOW voltage (TTL)
0
—
0.8
V
Input HIGH current (TTL)
—
50
500
µA
Input LOW current (TTL)
—
— -500
µA
Supply voltage
3.14
—
3.47
V
P_D
Power dissipation
—
625 900
mW
I_DD
Supply Current
—
190 260
mA
Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.
I_OH = -1.0 mA
I_OL = +1.0 mA
75Ω to V_DD – 2.0 V
(TX+ - TX-)
50Ω to V_DD – 2.0 V
(TX+ - TX-)
Internally biased to Vdd/2
(RX+ - RX-)
—
V_IN =2.4V
V_IN =0.5V
3.3V±5%
Outputs open,
V_DD = V_DD max
Outputs open,
V_DD = V_DD max
Absolute Maximum Ratings ⁽¹⁾
Power Supply Voltage, (V_DD).............................................................................................................-0.5V to +4V
DC Input Voltage (PECL inputs) ............................................................................................ -0.5V to V_DD +0.5V
DC Input Voltage (TTL inputs) .........................................................................................................-0.5V to 5.5V
DC Output Voltage (TTL Outputs)........................................................................................ -0.5V to V_DD + 0.5V
Output Current (TTL Outputs) ................................................................................................................ +/-50mA
Output Current (PECL Outputs)............................................................................................................... +/-50mA
Case Temperature Under Bias .........................................................................................................-55^o to +125^oC
Storage Temperature.....................................................................................................................-65^oC to +150^oC
Maximum Input ESD (Human Body Model).............................................................................................. 1500 V
Recommended Operating Conditions
Power Supply Voltage, (V_DD)................................................................................................................ +3.3V+5%
Operating Temperature Range ............................................................0^oC Ambient to +100^oC Case Temperature
Notes:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Page 10
© VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: [phone]
G52121-0, Rev. 4.1
4/23/98