SI4618DY Datasheet, PDF (9/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
150 °C
0.05
0.04
I_D = 8 A
Si4618DY
Vishay Siliconix
1
25 °C
0.1
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10^-1
0.03
0.02
125 °C
0.01
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
10^-2
30 V
160
10^-3
120
10 V
10^-4
80
10^-5
10^-6
0
20 V
25
50
75
100 125 150
V_SD - Source-to-Drain Voltage (V)
Reverse Current (Schottky)
100
*Limited by r_DS(on)
10
40
0
0.001
0.01
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
1 ms
Document Number: 74450
S-70193-Rev. A, 29-Jan-07
1
10 ms
100 ms
0.1
1s
T_A = 25 °C
10 s
Single Pulse
dc
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
*V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
9