SI4618DY Datasheet, PDF (10/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4618DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
17
14
10
7
3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
5
1.5
4
1.2
3
0.9
2
0.6
1
0.3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
*The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com
10
Document Number: 74450
S-70193-Rev. A, 29-Jan-07