SI4618DY Datasheet, PDF (2/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4618DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 1 mA
V_GS = 0 V, I_D = 1 mA
I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 1 mA
V_DS = V_GS, I_D = 1 mA
V_DS = 0 V, V_GS = ± 16 V
V_DS = 0 V, V_GS = ± 16 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
V_DS = 30 V, V_GS = 0 V, T_J = 100 °C
V_DS = 5 V, V_GS = 10 V
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 8 A
V_GS = 10 V, I_D = 8 A
V_GS = 4.5 V, I_D = 5 A
V_GS = 4.5 V, I_D = 5 A
V_DS = 15 V, I_D = 8 A
V_DS = 15 V, I_D = 8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
Channel-1
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Channel-2
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 15 V, V_GS = 10 V, I_D = 8 A
Q_g
V_DS = 15 V, V_GS = 10 V, I_D = 8 A
Channel-1
V_DS = 15 V, V_GS = 4.5 V, I_D = 8 A
Q_gs
Channel-2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = 8 A
Gate Resistance
R_g
f = 1 MHz
Min Typ^a Max Unit
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
35
-6
1
2.5
1
2.5
100
µA
100
0.001
0.05 0.5
mA
0.025
3
15
20
A
20
0.014 0.017
0.0083 0.010
Ω
0.016 0.0195
0.0095 0.0115
40
S
47
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1535
2290
205
pF
360
91
117
29
44
39
59
12.5 19
17
26
nC
4.1
5.6
3.4
4
1.8 3.0
Ω
1.9 3.0
www.vishay.com
2
Document Number: 74450
S-70193-Rev. A, 29-Jan-07