SI4618DY Datasheet, PDF (4/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4618DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
V_GS = 10 thru 4 V
40
1.6
30
1.2
20
3V
10
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.022
0.019
0.016
V_GS = 4.5 V
V_GS = 10 V
0.013
0.010
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 8 A
8
V_DS = 10 V
6
V_DS = 20 V
V_DS = 30 V
4
2
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.8
T_C = 25 °C
0.4
T_C = 125 °C
0.0
T_C = - 55 °C
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
C_iss
1600
1200
800
400
C_oss
0 ^Crss
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 8 A
1.6
V_GS = 10 V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74450
S-70193-Rev. A, 29-Jan-07