SI4618DY Datasheet, PDF (6/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4618DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
6
4
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
2.5
1.20
2.0
0.96
1.5
0.72
1.0
0.48
0.5
0.24
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.00
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Ambient
*The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com
6
Document Number: 74450
S-70193-Rev. A, 29-Jan-07