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SI4618DY Datasheet, PDF (1/12 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
New Product
Si4618DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
rDS(on) (Ω)
0.017 at VGS = 10 V
0.0195 at VGS = 4.5 V
0.010 at VGS = 10 V
0.0115 at VGS = 4.5 V
ID (A)a
8.0
7.5
15.2
14.1
Qg (Typ)
12.5
17
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
30
0.43 V at 1.0 A
IF (A)a
3.8
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Notebook Logic DC-DC
• Low Current DC-DC
D1
RoHS
COMPLIANT
G1 1
S2 2
S2 3
G2 4
SO-8
8 D1
7 S1/D2
6 S1/D2
5 S1/D2
Top View
Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free)
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
30
V
VGS
± 16
± 16
TC = 25 °C
8.0
15.2
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
6.4
6.7b, c
12.1
11.4b, c
TA = 70 °C
5.4b, c
9.1b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
35
60
A
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
1.8
1.25b, c
3.8
2.4b, c
Pulsed Source-Drain Current
ISM
35
35
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.2
15
11.2
mJ
TC = 25 °C
1.98
4.16
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.26
1.38b, c
2.66
2.35b, c
W
TA = 70 °C
0.88b, c
1.5b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ Max
Maximum Junction-to-Ambientb, d
t ≤ 10 sec
RthJA
72
90
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
51
63
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
Channel-2
Typ Max
43
53
25
30
Unit
°C/W
Document Number: 74450
S-70193-Rev. A, 29-Jan-07
www.vishay.com
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