SI4565ADY-T1-E3 Datasheet, PDF (9/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.30
0.24
Si4565ADY
Vishay Siliconix
I_D = 6 A
10
T_J = 150 °C
25 °C
1
0.0
0.6
0.3
0.6
0.9
1.2
1.5
V_SD ^{– Source-to-Drain Voltage (V)}
Source-Drain Diode Forward Voltage
0.18
0.12
T_A = 125 °C
0.06
T_A = 25 °C
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.4
80
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J – Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power vs. Junction-to-Ambient
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
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