SI4565ADY-T1-E3 Datasheet, PDF (1/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

Si4565ADY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel 40
0.039 at V_GS = 10 V
0.050 at V_GS = 4.5 V
0.054 at V_GS = - 10 V
P-Channel - 40
0.072 at V_GS = - 4.5 V
I_D (A)^a
6.6
5.8
Q_g (Typ.)
6.6
- 4.5
9
- 3.9
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• CCFL Inverter
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁
G₁
S₂
G₂
Top View
Ordering Information: Si4565ADY-T1-E3 (Lead (Pb)-free)
Si4565ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
- 40
V
V_GS
± 16
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
6.6
5.3
5.3^{b, c}
- 5.6
- 4.5
- 4.5^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
T_A = 70 °C
I_DM
4.2^{b, c}
30
- 3.6^{b, c}
- 30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T_C = 25 °C
T_A = 25 °C
I_S
I_SM
2.5
1.7^{b, c}
30
- 2.5
- 1.7^{b, c}
- 30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
13
E_AS
8.5
16
13
mJ
T_C = 25 °C
3.1
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2
2^{b, c}
2
W
2^{b, c}
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
1.28^{b, c}
1.28^{b, c}
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ.
Max.
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady-State
R_thJA
R_thJF
52
62.5
32
40
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
P-Channel
Typ.
Max.
50
62.5
30
38
Unit
°C/W
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
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