SI4565ADY-T1-E3 Datasheet, PDF (11/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4565ADY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
10^-3
1
Duty Cycle = 0.5
NNootteess::
PP_DDMM
Single Pulse
tt₁₁
tt₂₂
11.. DDuuttyy CCyyccllee,, DD ==
tt₁₁
tt₂₂
22.. PPeerr UUnniitt BBaassee == RR_tthhJJAA == 91320°C°C/W
33.. TT_JJMM –– TT == PP_DDMMZZ_{tthhJJAA((tt))}
44.. SSuurrffaaccee MMoouunntteedd
10^-2
10^-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73880.
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
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