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SI4565ADY-T1-E3 Datasheet, PDF (2/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET
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Si4565ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVDS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb RDS(on)
Forward Transconductanceb
gfs
Dynamica
VDS = 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 5 A
VGS = - 10 V, ID = - 4.5 A
VGS = 4.5 V, ID = 4 A
VGS = - 4.5 V, ID = - 3.9 A
VDS = 15 V, ID = 5 A
VDS = - 15 V, ID = - 4.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 5 A
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5 A
Qgs
P-Channel
Qgd
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
40
- 40
0.8
- 0.8
20
- 20
Typ.a
Max. Unit
37
- 38
-5
4.0
0.032
0.045
0.041
0.059
15
13
V
2.2
- 2.2
100
- 100
nA
1
-1
µA
10
- 10
A
0.039
0.054
Ω
0.050
0.072
S
625
805
88
pF
120
50
85
14.4
22
18.5
28
6.6
10
9
14
nC
1.6
2
2.3
3.6
2.3
3.5
Ω
11.5
18
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Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
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