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SI4565ADY-T1-E3 Datasheet, PDF (3/15 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET
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Si4565ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
IS = 1.7 A
IS = - 1.7 A
N-Channel
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta
P-Channel
IF = - 1.7 A, dI/dt = - 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.a
9
7
51
42
21
33
6
56
13
21
85
90
17
44
7
56
0.79
- 0.79
30
27
30
17
17
13
13
14
Max. Unit
15
14
77
65
ns
32
50
10
85
20
32
128
135
ns
26
66
11
85
2.5
- 2.5
A
30
- 30
1.2
V
- 1.2
45
ns
45
45
nC
26
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
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